| PART |
Description |
Maker |
| AS7C31025A-10TI |
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Alliance Semiconductor, Corp.
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM
85ns; Ultra low power 128K x 16 CMOS SRAM
55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
| CXK5T81000ATM/AYM/AM-12LLX CXK5T81000ATM/AYM/AM-10 |
128K X 8 STANDARD SRAM, 120 ns, PDSO32
128K X 8 STANDARD SRAM, 100 ns, PDSO32
131072-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| 62LV12816 IS62LV12816L-70TI IS62LV12816L-100B IS62 |
128K x 16 CMOS STATIC RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| KM681002C KM681002C-10 KM681002C-12 KM681002C-15 K |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围
128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IS63LV1024-8KL IS63LV1024L-10HL IS63LV1024L-10KLI |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
| AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IDT7MMV4101 IDT7MMV4101S10BG IDT7MMV4101S10BGI IDT |
128K x 24 Three Megabit 3.3V CMOS Static RAM 128K × 24.3V的CMOS静态RAM
Octal Buffers/Drivers With 3-State Outputs 20-SO -40 to 85 128K X 24 STANDARD SRAM, 15 ns, PBGA119
Octal Buffers/Drivers With 3-State Outputs 20-PDIP -40 to 85 128K X 24 STANDARD SRAM, 12 ns, PBGA119
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| CY7C1347F-166AC CY7C1347F-166AI CY7C1347F-166BGC C |
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 4 ns, PBGA165
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 3.5 ns, PBGA119
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 3.5 ns, PQFP100
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 2.8 ns, PBGA119
4-Mbit (128K x 36) Pipelined Sync SRAM 4兆位28K的36）流水线同步静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| BS62LV1027DC70 BS62LV1027PC70 BS62LV1027TC70 BS62L |
Very Low Power CMOS SRAM 128K X 8 bit 非常低功耗CMOS SRAM 128K的8
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
